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Description: NAND Flash Controller & ECC VHDL Code-NAND Flash Controller
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Size: 23323 |
Author: jp1234567 |
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Description: Micron 公司的NAND flash ECC模块技术文档。
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Size: 825668 |
Author: 王顺 |
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Description: Toshiba NAND Flash ECC(Error Checking & Correction)演算法原理介绍
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Size: 81141 |
Author: 趙小豪 |
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Description: NAND Flash的BCH ECC算法。
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Size: 105957 |
Author: chencheng |
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Description: Spanion的关于NAND Flash的ECC算法的简单比较，有兴趣的可以看看。
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Size: 84704 |
Author: chencheng |
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Description: 本文件将介绍Flash Management System的FLASH存储空间划分，ECC数据纠错，坏块处
理，均匀(寿命)存储算法，逻辑地址/物理地址映射算法实现的方案，
Platform: |
Size: 8815 |
Author: 6756 |
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Description: Samsung nand flash MEMORY ECC结构和检验
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Size: 43952 |
Author: haitao |
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Description: 带Java扩展的ARM926EJ-S内核, 2 x 8KB快取, MMU
2x4k Bytes SRAM, 32kBytes Boot ROM
210MHz, 230MIPs
EBI –可支持SDRAM, NAND Flash (带ECC)和Compact Flash
USB控制器和USB器件口, V2.0全速
Ethernet MAC - 10/100
图像传感器界面 (CMOS传感器界面)
1 SSC可支持I2S和TDM
2 SPI, MCI (SDCard和MMC兼容), TWI
6 USARTs, 支持IrDA, ISO7816 T=0/T=1, RS485
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Size: 2477224 |
Author: xujj |
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Description: samsung nand flash k9f series ECC algorithm
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Size: 172106 |
Author: aa |
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Description: 带Java扩展的ARM926EJ-S内核, 2 x 8KB快取, MMU
2x4k Bytes SRAM, 32kBytes Boot ROM
210MHz, 230MIPs
EBI –可支持SDRAM, NAND Flash (带ECC)和Compact Flash
USB控制器和USB器件口, V2.0全速
Ethernet MAC - 10/100
图像传感器界面 (CMOS传感器界面)
1 SSC可支持I2S和TDM
2 SPI, MCI (SDCard和MMC兼容), TWI
6 USARTs, 支持IrDA, ISO7816 T=0/T=1, RS485-Java extension with ARM926EJ-S core, 2 x 8KB cache, MMU2x4k Bytes SRAM, 32kBytes Boot ROM210MHz, 230MIPsEBI- can support SDRAM, NAND Flash (with ECC) and Compact FlashUSB controller and the USB device port, V2.0 full speed Ethernet MAC- 10/100 Image Sensor Interface (CMOS sensor interface) 1 SSC can support I2S and TDM2 SPI, MCI (SDCard and MMC compatible), TWI6 USARTs, support for IrDA, ISO7816 T = 0/T = 1, RS485
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Size: 2477056 |
Author: xujj |
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Description: 三星公司的flash的ecc检验c程序代码-Samsung
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Size: 3072 |
Author: zhangxin |
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Description: 本文件将介绍Flash Management System的FLASH存储空间划分，ECC数据纠错，坏块处
理，均匀(寿命)存储算法，逻辑地址/物理地址映射算法实现的方案，
-This document will introduce the Flash Management System into the FLASH memory, ECC data error correction, bad block handling, uniform (life) storage algorithm, logical address/physical address mapping algorithm of the program,
Platform: |
Size: 8192 |
Author: 6756 |
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Description: lpc2200系列cpu接Nand Flash使用的ECC校验算法-lpc2200 series cpu then Nand Flash ECC checksum algorithm used
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Size: 6144 |
Author: cuiwenchao |
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Description: 实现对三星nand Flash的存储信息的错误检测，实现一位纠错，两位检错-ECC check 1bit correct 2bit check Samsung nand Flash
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Size: 1506304 |
Author: xidian |
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Description: NAND Flash的ECC算法原理和实现。NAND Flash由于工艺的原因，不可避免有坏区，所以需要ECC 算法进行校验。-NAND Flash ECC Design
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Size: 86016 |
Author: 朱伟华 |
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Description: 计算nand flash中数据块的ecc代码.nand flash一页为512+16大小-Nand flash in the calculation of the ecc code block. Nand flash page size of 512+16
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Size: 1003520 |
Author: 对光 |
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Description: 一、 概况
1. NAND 闪存的种类
2. NAND 闪存的框架
3. 非全页的编程（Partial Page Programming）
4. 从NAND 启动（Booting From NAND）
二、 NAND 闪存的可靠性问题
1. 坏块管理（Bad Block Management，BBM)
2. 坏块管理算法的规范 （BBM Algorithm Specification）
3. 6 个工厂编程的坏块管理的要素（Six BBM Factory Programming Elements）
1) 坏块的替换策略（Bad Block Replacement Strategy，BBR）
2) 分区（Partitioning）
3) 纠错码（Error Correction Codes ，ECC )
4) 备用区的使用（Spare Area Placement，SAP）
5) 未用好块的格式（Free Good Block Formatting）
6) 动态元数据（Dynamic Metadata）
4. 系统举例
5. 通用的工厂编程坏块管理方案（Universal Factory Programming BBM Scheme）
6. 第三方和客制化的坏块管理方案（Third-party and Custom BBM Schemes）
三、 对Managed NAND 编程（Programming Managed NAND）
四、 NAND 的序列号（Serializing NAND）
五、 结论-I. Overview
1. NAND type flash memory
2. NAND flash memory framework
3. Non-full-page programming (Partial Page Programming)
4. From the NAND boot (Booting From NAND)
Second, NAND flash memory reliability problems
1. Bad block management (Bad Block Management, BBM)
2. Bad block management algorithm specification (BBM Algorithm Specification)
3.6 factory-programmed elements of bad block management (Six BBM Factory Programming Elements)
1) bad block replacement policy (Bad Block Replacement Strategy, BBR)
2) partition (Partitioning)
3) error-correcting code (Error Correction Codes, ECC)
4) the use of spare area (Spare Area Placement, SAP)
5) the format is not good use of the block (Free Good Block Formatting)
6) The dynamic metadata (Dynamic Metadata)
4. System Example
5. GM s factory-programmed bad block management program (Universal Factory Programming BBM Scheme)
6. Third-party and custom bad block management program (Third-party and Custom BB
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Size: 2125824 |
Author: livimi |
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Description: UFFS v1.3.3 is released.
- Simplify flash interface.
- Improved bad block handling.
- Better support for MLC NAND flash.
- Added hardware ECC and RS-ECC controller emulator.
- Bug fixes.
The biggest change of this release is on the flash interface. We simplify the flash interface, writting a NAND flash driver is much simpler than befor.
The flash-interface-example.c adds the NAND commands demo, it s a good start point to the real NAND flash driver.-UFFS v1.3.3 is released.
- Simplify flash interface.
- Improved bad block handling.
- Better support for MLC NAND flash.
- Added hardware ECC and RS-ECC controller emulator.
- Bug fixes.
The biggest change of this release is on the flash interface. We simplify the flash interface, writting a NAND flash driver is much simpler than befor.
The flash-interface-example.c adds the NAND commands demo, it s a good start point to the real NAND flash driver.
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Size: 863232 |
Author: saravana raj |
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Description: 用于NAND FLASH CONTROLLER 中的的 ecc 各个模块VHDL代码，已通过测试。
-For NAND FLASH CONTROLLER in ecc VHDL code of each module, has been tested.
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Size: 190464 |
Author: yongjiu |
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Description: 用于nand flash 的ecc模块，denali出品-For nand flash-ecc module, denali Publisher
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Size: 67584 |
Author: 谈笑 |
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